1 publication order number: NGD8205AN/d NGD8205AN ignition igbt 20 amp, 350 volt, n ? channel dpak this logic level insulated gate bipolar t ransistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil ? on? plug and driver? on? coil applications ? dp ak package offers smaller footprint for increased board space ? gate? emitter esd protection ? t emperature compensated gate ? collector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold v oltage for interfacing power loads to logic or microprocessor devices ? low saturation v oltage ? high pulsed current capability ? optional gate resistor (r g ) and gate ? emitter resistor (r ge ) ? these are pb ? free devices applications ? ignition systems maximum ratings (t j = 25 c unless otherwise noted) rating symbol v alue unit collector? emitter voltage v ces 390 v collector? gate voltage v cer 390 v gate? emitter voltage v ge 15 v collector current? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate current i g 1.0 ma t ransient gate current (t 2 ms, f 100 hz) i g 20 ma esd (charged ? device model) esd 2.0 kv esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 400 v t otal power dissipation @ t c = 25 c derate above 25 c p d 125 0.83 w w/ c operating & storage t emperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 20 a, 350 v v c e(on) = 1.3 v @ i c = 10 a, v ge 4.5 v c e g dp ak case 369c style 7 ordering information marking diagram y = year ww = work week ngd8205x = device code x = a g = pb? free package r g r ge littelfuse.com NGD8205ANt4g dpak (pb?free) yww ngd 8205xg 1 g e cc 1 2 3 4 specifications subject to change without notice. ? 2016 littelfuse, inc. device package shipping 2500/t ape & ree l december, 2016 ? rev. 10
NGD8205AN unclamped collector ?to ? emitter avalanche characteristics (? 55 t j 175 c) characteristic symbol value unit single pulse collector ? to? emitter a valanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 16.7 a, r g = 1000 , l = 1.8 mh, starting t j = 25 c v cc = 50 v, v ge = 5.0 v, pk i l = 14.9 a, r g = 1000 , l = 1.8 mh, starting t j = 150 c v cc = 50 v, v ge = 5.0 v, pk i l = 14.1 a, r g = 1000 , l = 1.8 mh, starting t j = 175 c e as 250 200 180 mj reverse a valanche energy v cc = 100 v, v ge = 20 v, pk i l = 25.8 a, l = 6.0 mh, starting t j = 25 c e as(r) 2000 mj thermal characteristics th ermal resistance, junction ? to?case r jc 1.2 c/w th ermal resistance, junction ? to? ambient (note 1) r ja 95 c/w maximum temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 175 c 325 350 375 v i c = 10 ma t j = ? 40 c to 175 c 340 365 390 zero gate voltage collector current i ces v ge = 0 v, v ce = 15 v t j = 25 c 0.1 1.0 a v ce = 175 v, v ge = 0 v t j = 25 c 0.5 1.5 10 a t j = 175 c 1.0 25 100* t j = ? 40 c 0.4 0.8 5.0 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 30 35 39 v t j = 175 c 35 39 45* t j = ? 40 c 30 33 37 reverse collector ? emitter leakage current i ces(r) v ce = ? 24 v ma t j = 25 c 0.05 0.25 1.0 t j = 175 c 1.0 12.5 25 t j = ? 40 c 0.03 0.25 gate? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 175 c 12 12.5 14 v gate? emitter leakage current i ges v ge = 5.0 v t j = ? 40 c to 175 c 200 300 350* a gate resistor (optional) r g t j = ? 40 c to 175 c 70 gate? emitter resistor r ge t j = ? 40 c to 175 c 14.25 16 25 k on characteristics (note 4) gate threshold voltage v ge(th) i c = 1.0 ma, v ge = v ce t j = 25 c 1.5 1.8 2.1 v t j = 175 c 0.7 1.0 1.3 t j = ? 40 c 1.7 2.0 2.3* threshold t emperature coefficient (negative) 3.8 4.6 6.0 mv/ c *maximum value of characteristic across temperature range. 3. pulse test: pulse width 300 s, duty cycle 2%. 2 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. NGD8205AN/d december, 2016 ? rev. 10
NGD8205AN electrical characteristics characteristic symbol t est conditions t emperature min ty p max unit on characteristics (note 4) collector ? to? emitter on? voltage v ce(on) i c = 6.5 a, v ge = 3.7 v t j = 25 c 0.95 1.15 1.35 v t j = 175 c 0.7 0.95 1.15 t j = ? 40 c 1.0 1.3 1.40 i c = 9.0 a, v ge = 3.9 v t j = 25 c 0.95 1.25 1.45 t j = 175 c 0.8 1.05 1.25 t j = ? 40 c 1.1 1.4 1.5 i c = 7.5 a, v ge = 4.5 v t j = 25 c 0.85 1.15 1.4 t j = 175 c 0.7 0.95 1.2 t j = ? 40 c 1.0 1.3 1.6* i c = 10 a, v ge = 4.5 v t j = 25 c 1.0 1.3 1.6 t j = 175 c 0.8 1.05 1.4 t j = ? 40 c 1.1 1.4 1.7* i c = 15 a, v ge = 4.5 v t j = 25 c 1.15 1.45 1.7 t j = 175 c 1.0 1.3 1.55 t j = ? 40 c 1.25 1.55 1.8* i c = 20 a, v ge = 4.5 v t j = 25 c 1.3 1.6 1.9 t j = 175 c 1.2 1.5 1.8 t j = ? 40 c 1.4 1.75 2.0* forward transconductance gfs i c = 6.0 a, v ce = 5.0 v t j = 25 c 10 18 25 mhos dynamic characteristics input capacitance c iss f = 10 khz, v ce = 25 v t j = 25 c 1 100 1300 1500 pf output capacitance c oss 70 80 90 t ransfer capacitance c rss 18 20 22 switching characteristics t urn? off delay time (resistive) t d(of f) v cc = 300 v, i c = 9.0 a r g = 1.0 k , r l = 33 , v ge = 5.0 v t j = 25 c 6.0 8.0 10 sec t j = 175 c 6.0 8.0 10 fall time (resistive) t f t j = 25 c 4.0 6.0 8.0 t j = 175 c 8.0 10.5 14 t urn? off delay time (inductive) t d(of f) v cc = 300 v, i c = 9.0 a r g = 1.0 k , l = 300 h, v ge = 5.0 v t j = 25 c 3.0 5.0 7.0 t j = 175 c 5.0 7.0 9.0 fall time (inductive) t f t j = 25 c 1.5 3.0 4.5 t j = 175 c 5.0 7.0 10 t urn? on delay time t d(on) v cc = 14 v, i c = 9.0 a r g = 1.0 k , r l = 1.5 , v ge = 5.0 v t j = 25 c 1.0 1.5 2.0 t j = 175 c 1.0 1.5 2.0 rise time t r t j = 25 c 4.0 6.0 8.0 t j = 175 c 3.0 5.0 7.0 *maximum v alue of characteristic across temperature range. 4. pulse test: pulse width 300 s, duty cycle 2%. 3 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. NGD8205AN/d december, 2016 ? rev. 10
NGD8205AN typical electrical characteristics figure 1. self clamped inductive switching figure 2. open secondary avalanche current vs. temperature figure 3. collector?to?emitter voltage vs. junction temperature figure 4. collector current vs. collector? to? emitter voltage figure 5. collector current vs. collector? to? emitter voltage figure 6. collector current vs. collector? to? emitter voltage induct or (mh) 250 06 8 4 100 50 200 0 400 150 10 t j = 25 c scis energy (mj) t j , junction tempera ture ( c) ?50 50 75 250 100 ?25 125 10 20 5 15 0 25 30 175 v cc = 14 v v ge = 5.0 v r g = 1000 l = 10 mh 150 l = 3.0 mh l = 1.8 mh i a , a valanche current (a) 1.25 t j , junction tempera ture ( c) v ce , collect or to emitter voltage (v) ?50 50 75 250 100 ?25 125 0.5 1.5 0.25 1.0 0.0 1.75 2.0 0.75 150 v ge = 4.5 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 7.5 a 0 40 6 10 4 2 i c, collect or current (a) 0 60 20 30 50 8 13 57 v ce , collect or to emitter voltage (v) t j = 175 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 0 40 6 10 4 2 i c, collect or current (a) 0 60 20 30 50 8 13 57 v ce , collect or to emitter voltage (v) t j = ? 40 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 40 10 2 i c, collect or current (a) 0 60 20 30 50 8 13 57 v ce , collect or to emitter voltage (v) t j = 25 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 06 4 v cc = 14 v v ge = 5.0 v r g = 1000 350 300 2 t j = 175 c 175 4 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. NGD8205AN/d december, 2016 ? rev. 10
NGD8205AN typical electrical characteristics t j , junction temperature ( c) ga te threshold voltage (v) ?50 75 100 250 125 ?25 175 mean + 4 mean ? 4 mean v ge , ga te to emitter voltage (v) 1.50 0.25 0 2.50 0.75 1.25 2.00 6 4 0 8 10 12 figure 7. transfer characteristics figure 8. collector ?to? emitter leakage current vs. temperature figure 9. gate threshold voltage vs. temperature figure 10. capacitance vs. collector? to? emitter voltage figure 11. resistive switching fall time vs. temperature figure 12. inductive switching fall time vs. temperature t j , junction temperature ( c) switching time ( s) t j = 175 c 50 75 25 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a l = 300 h 1.5 3 3.5 2.5 4 2 0.5 20 10 40 0 30 0 v ce = 5 v i c , collect or current (a) 50 150 0.50 1.00 1.75 2.25 2 125 t delay 10000 1000 100 10 0.1 v ce , collect or to emitter voltage (v) c, capacitance (pf) 01 5 52 5 10 20 c rss c iss c oss 1.0 6 4 0 8 10 12 t j , junction tempera ture ( c) switching time ( s) 75 50 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a r l = 33 2 25 125 t delay 25 15 45 5 35 1 t j = ? 40 c t j = 25 c 100000 1000 100 10 0.1 t j , junction tempera ture ( c) collect or to emitter leakage current ( a) 05 0 25 ?25 125 175 75 100 150 v ce = 175 v 1.0 ?50 v ce = ? 24 v 10000 5 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. NGD8205AN/d december, 2016 ? rev. 10
NGD8205AN 0.000001 0.001 0.0001 0.1 100 1 0.01 0.01 t,time (s) r(t), transient thermal resist ance ( c/watt) 11 0 100 1000 0.1 figure 13. minimum pad transient thermal resistance (non?normalized junction?to?ambient) 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 figure 14. best case transient thermal resistance (non? normalized junction ?to? case mounted on cold plate) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d cur ves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) for d=1: r jc r(t) for t 0.1 s 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,time (s) r jc (t), transient thermal resist ance ( c/watt) 11 0 0.1 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d cur ves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r jc (t) 6 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. NGD8205AN/d december, 2016 ? rev. 10
NGD8205AN package dimensions dp ak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inc hes scale 3:1 soldering footprint h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rota ted 90 cw style 7: pin 1. gate 2. collector 3. emitter 4. collector littelfuse.com 7 publication order number: specifications subject to change without notice. ? 2016 littelfuse, inc. infor mation furnished is believed to be accurate and reliable. however, users should independently evaluate the suitability of and test each pr oduct selec ted for their own applications.? littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those express ly set forth in applic able littelfuse product documentation.? warranties granted by littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable littelfuse documentation.? littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by littelfuse as set forth in applicable littelfuse documentation.? the sale and use of littelfuse products is subject to littelfuse terms and conditions of sale, unless otherwise agreed by littelfuse. NGD8205AN/d december, 2016 ? rev. 10
|
